CHARACTERIZATION OF OPEN CELL SIC FOAM MATERIAL
نویسندگان
چکیده
منابع مشابه
Characterization of Open Cell Sic Foam Material
This paper presents characterization and modeling of microwave characteristics of SiC foam material. Transmission and reflection measurements are performed in X, K and Ka band for the samples of two different pore sizes and three different thicknesses. Effective and frequency dependent dielectric permittivity is extracted for 50PPI 10mm sample, while for the other samples it was not possible be...
متن کاملExperimental Cosserat elasticity in open cell polymer foam
Reticulated open cell polymer foams exhibit substantial size e↵ects in torsion and bending: slender specimens are more rigid than anticipated via classical elasticity. Such size e↵ects are predicted by Cosserat (micropolar) elasticity, which allows points to rotate as well as translate and incorporates distributed moments (couple stresses). The Cosserat characteristic length is larger than the ...
متن کاملInvestigation of Glass- Steel Slag Foam Composite Sintering in Presence of SiC
Amorphous steel slag was blended with different concentrations of waste glass (20, 40, 50, 60, 70 wt.%) and SiC to obtain a composite. According to Hot Stage Microscopy images, slag-glass composite contractions started at 1050 ºC. scanning electron microscope micrographs of slag-SiC (foaming agent) composite revealed tunnel-like porosities of 500 to 1000 microns. Gaseous products of carbide dec...
متن کاملEffect of ethylene vinyl acetate (EVA) closed cell foam on transmitted forces in mouthguard material.
OBJECTIVES To compare transmitted forces through ethylene vinyl acetate (EVA) mouthguard material and the same EVA material with gas inclusions in the form of a closed cell foam. METHOD EVA mouthguard materials with and without foam gas inclusions and 4 mm thick were impacted with a constant force from an impact pendulum. Various porosity levels in the foam materials were produced by 1%, 5%, ...
متن کاملCharacterization of Ni-implanted GaN and SiC
High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...
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ژورنال
عنوان ژورنال: Progress In Electromagnetics Research B
سال: 2012
ISSN: 1937-6472
DOI: 10.2528/pierb11121504